小尺寸、单分散Cd2+掺杂β-NaLuF∶Yb,Er上转换纳米晶的合成

采用改进高温热分解法合成了Cd2+掺杂NaLuF4∶Yb,Er纳米晶体,研究了Cd2+对晶相形成和发光强度的影响,采用CASTEP计算不同掺杂浓度下β-NaLuF4∶Yb,Er的形成能.在掺杂浓度为6mol;时合成的纳米晶荧光强度最强,其相较于未掺杂时增加了2.6倍,此时平均尺寸为23 nm左右.随后通过控制添加合适比例和含量的分散剂,解决了晶体易团聚的问题,得到了平均尺寸为18 nm的结晶度高、分散性好的上转换纳米晶.通过二氧化硅壳层的包覆,降低了Cd2泄露引起的毒性反应,表明在浓度较低时呈现出低毒性,满足了上转换纳米晶在医用材料领域应用的要求.     

分数阶Schrodinger—Kirchhoff方程无穷多高能量解的存在性

本文研究如下带有变号势函数的分数阶Schrodinger Kirchhoff方程(a+b∫∫R^N|u(x)-u(y)|^p/|x-y|^N+p^sdxdy)^p-1(-△)p^su+λV(x)|u|^p-2u=f(x,u)-μg(x)|u|^q-2u,x∈R^N.其中s∈(0,1),p∈[2,∞),q∈(l,p),a,b>0,λ,μ>0均为正常数,在V,f,g等函数合适的条件下,运用喷泉定理获得该系统无穷多高能量解的存在性.     

EAST装置上W波段多道极向相关反射仪的研制

在EAST装置上安装了X模极化W波段多道相关反射仪，用于测量等离子体芯部密度涨落。该诊断利用低损耗(<3dB)多工器将4个不同频率(79.2GHz，85.2GHz，91.8GHz和96GHz)的微波耦合在一起，通过同一个天线发射。反射波由两个极向分离(~5cm)的天线接收，通过下变频技术实现外差测量。通过对两个极向天线接收的信号进行相关分析，获得芯部湍流垂直速度。对2018年低约束模式(L模)放电进行分析发现，在电子回旋共振加热(ECRH)等离子体中，芯部湍流垂直速度在电子逆磁漂移方向。而在注入同向中性束(co-NBI)后，芯部湍流垂直速度变为离子逆磁漂移方向。     

Cytosine-5 methylation-directed construction of a Au nanoparticle-based nanosensor for simultaneous detection of multiple DNA methyltransferases at the single-molecule level

DNA methylation at cytosine/guanine dinucleotide islands (CpGIs) is the most prominent epigenetic modification in prokaryotic and eukaryotic genomes. DNA methyltransferases (MTases) are responsible for genomic methylation, and their aberrant activities are closely associated with various diseases including cancers. However, the specific and sensitive detection of multiple DNA MTases has remained a great challenge due to the specificity of the methylase substrate and the rareness of methylation-sensitive restriction endonuclease species. Here, we demonstrate for the first time the cytosine-5 methylation-directed construction of a Au nanoparticle (AuNP)-based nanosensor for simultaneous detection of multiple DNA MTases at the single-molecule level. We used the methyl-directed endonuclease GlaI to cleave the site-specific 5-methylcytosine (5-mC). In the presence of CpG and GpC MTases (i.e., M.SssI and M.CviPI), their hairpin substrates are methylated at cytosine-5 to form the catalytic substrates for GlaI, respectively, followed by simultaneous cleavage by GlaI to yield two capture probes. These two capture probes can hybridize with the Cy5/Cy3–signal probes which are assembled on the AuNPs, respectively, to form the double-stranded DNAs (dsDNAs). Each dsDNA with a guanine ribonucleotide can act as the catalytic substrate for ribonuclease (RNase HII), inducing recycling cleavage of signal probes to liberate large numbers of Cy5 and Cy3 molecules from the AuNPs. The released Cy5 and Cy3 molecules can be simply quantified by total internal reflection fluorescence (TIRF)-based single-molecule imaging for simultaneous measurement of M.SssI and M.CviPI MTase activities. This method exhibits good specificity and high sensitivity with a detection limit of 2.01 × 10⁻³ U mL⁻¹ for M.SssI MTase and 3.39 × 10⁻³ U mL⁻¹ for M.CviPI MTase, and it can be further applied for discriminating different kinds of DNA MTases, screening potential inhibitors, and measuring DNA MTase activities in human serum and cell lysate samples, holding great potential in biomedical research, clinical diagnosis, drug discovery and cancer therapeutics.

Cytosine-5 methylation-directed construction of Au nanoparticle-based nanosensors enables specific and sensitive detection of multiple DNA methyltransferases.     

新型稀磁半导体Fe掺杂LiZnP的光电性质

采用基于密度泛函理论的第一性原理计算法研究了新型稀磁半导体Li_(1±)_y(Zn_(1-)_xFe_x)P (x=0, 0.0625;y=0, 0.0625)的电子结构、磁性及光学性质.结果表明,Fe的掺入使体系产生自旋极化杂质带,Fe的3d态与Li2s态,Zn4s态以及P3p态的态密度峰在费米能级处出现重叠,产生sp-d轨道杂化,此时体系净磁矩最大,材料表现出金属性,导电性增强.当Li空位时,导电性减弱,但杂质带宽度最大,居里温度最高.而Li填隙时,体系形成能最低,材料变为半金属性,表现为100%自旋注入,表明掺杂体系的磁性和电性可以分别通过Fe的掺入和Li的含量进行调控.对比光学性质发现,Li空位时,在介电函数虚部和复折射率函数的低能区出现新峰,扩大了对低频电磁波的吸收范围.能量损失函数表明掺杂体系具有明显的蓝移效应,且Li填隙时有更强的等离子共振频率.     

Visualizing surrogate decision trees of convolutional neural networks

Journal of Visualization - Interpreting the decision-making of black boxes in machine learning becomes urgent nowadays due to their lack of transparency. One effective way to interpret these models...     

Investigation of active-region doping on InAs/GaSb long wave infrared detectors

The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.